technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http://www.microsemi.com high reliability silicon power rectifier qualified per mil-prf-19500/162 ? glass passivated die ? glass to metal seal construction ? vrrm 200 to 1000 volts t4-lds-0139 rev. 1 (091749) page 1 of 3 devices levels 1n1614 1n4458 1n1614r 1n4458r jan 1n1615 1n4459 1n1615r 1n4459r jantx 1n1616 1n1616r absolute maximum ratings (t c = +25c unless otherwise noted) parameters / test conditions symbol value unit peak repetitive reverse voltage 1n1614 1n1615 1n1616 1n4458 1n4459 1n1614r 1n1615r 1n1616r 1n4458r 1n4459r v rwm 200 400 600 800 1000 v average forward current, t c = 150 i f 15 a peak surge forward current @ t p = 8.3ms, half sinewave, t c = 150c i fsm 100 a thermal resistance, junction to case r jc 4.5 c/w operating case temperature range t j -65c to 175c c storage temperature range t stg -65c to 175c c electrical characteristics (t a = +25c, unless otherwise noted) parameters / test conditions symbol min. max. unit forward voltage i fm = 15a, t c = 25c* v fm 1.5 v reverse current v rm = 200, t c = 25c v rm = 400, t c = 25c v rm = 600, t c = 25c v rm = 800, t c = 25c v rm = 1000, t c = 25c 1n1614 1n1615 1n1616 1n4458 1n4459 1n1614r 1n1615r 1n1616r 1n4458r 1n4459r i rm 50 a reverse current v rm = 200, t c = 150c v rm = 400, t c = 150c v rm = 600, t c = 150c v rm = 800, t c = 150c v rm = 1000, t c = 150c 1n1614 1n1615 1n1616 1n4458 1n4459 1n1614r 1n1615r 1n1616r 1n4458r 1n4459r i rm 500 a * pulse test: pulse width 300 sec, duty cycle 2% note: do-203aa (do-4)
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http://www.microsemi.com high reliability silicon power rectifier t4-lds-0139 rev. 1 (091749) page 2 of 3 graphs figure 3 forward current derating figure 1 typical forward characteristics figure 4 transient thermal impedance figure 2 typical reverse characteristics
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http://www.microsemi.com high reliability silicon power rectifier t4-lds-0139 rev. 1 (091749) page 3 of 3 package dimensions dimensions symbol inches millimeters notes min max min max cd .250 6.35 9 cd1 .424 10.77 ch .405 10.29 g .060 1.52 hf .424 .437 10.77 11.10 ht .075 .175 1.91 4.45 oah .800 20.32 sp 6,7,8 sl .422 .453 10.72 11.51 t .060 1.52 notes: 1. dimensions are in inches. 2. millimeter equivalents are given for general information only. 3. angular orientation of this terminal is undefined. 4. diameter of unthreaded portion .189 inch (4.80 mm) maximum; .163 inch (4.14 mm) minimum. 5. the a.s.a. thread reference is 10-32unf2a (unplated). 6. the maximum diameter of plated threads shall be basic pitch diameter .169 inch (4.29 mm). 7. unit shall not be damaged by torque of 15 inch-pound applied to 10-32nf2b nut assembled on thread. 8. complete threads shall extend to within 2.5 threads of the seating plane. 9. terminal end shape is unrestricted. 10. in accordance with asme y14.5m, diameters are equivalent to x symbology. physical dimensions
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